Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information stora
GaAs-based 9xx-nm broad-area diode lasers (BALs) offer the highest optical power (Popt) among diode lasers and the highest conversion efficiency (ηE) among all
Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to