Study of Advanced Silicon-Based Power Devices : Simulation Understanding in Lateral Trench Gate MOSFETs and Reliability Analysis in Insulated Gate Bipolar Transistors

Study of Advanced Silicon-Based Power Devices : Simulation Understanding in Lateral Trench Gate MOSFETs and Reliability Analysis in Insulated Gate Bipolar Transistors
Author :
Publisher :
Total Pages : 54
Release :
ISBN-10 : OCLC:1292561903
ISBN-13 :
Rating : 4/5 (03 Downloads)

Book Synopsis Study of Advanced Silicon-Based Power Devices : Simulation Understanding in Lateral Trench Gate MOSFETs and Reliability Analysis in Insulated Gate Bipolar Transistors by :

Download or read book Study of Advanced Silicon-Based Power Devices : Simulation Understanding in Lateral Trench Gate MOSFETs and Reliability Analysis in Insulated Gate Bipolar Transistors written by and published by . This book was released on 2021 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Study of Advanced Silicon-Based Power Devices : Simulation Understanding in Lateral Trench Gate MOSFETs and Reliability Analysis in Insulated Gate Bipolar Transistors Related Books

Insulated Gate Bipolar Transistor IGBT Theory and Design
Language: en
Pages: 648
Authors: Vinod Kumar Khanna
Categories: Technology & Engineering
Type: BOOK - Published: 2004-04-05 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics.
The IGBT Device
Language: en
Pages: 733
Authors: B. Jayant Baliga
Categories: Technology & Engineering
Type: BOOK - Published: 2015-03-06 - Publisher: William Andrew

DOWNLOAD EBOOK

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and ref
Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices
Language: en
Pages:
Authors:
Categories:
Type: BOOK - Published: 2001 - Publisher:

DOWNLOAD EBOOK

This research focuses on the design, characterization, modeling and analysis of high voltage Silicon Carbide (SiC) metal-oxide-semiconductor field effect transi
Silicon and Beyond
Language: en
Pages: 196
Authors: Michael Shur
Categories: Technology & Engineering
Type: BOOK - Published: 2000 - Publisher: World Scientific

DOWNLOAD EBOOK

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on n