Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S J Pearton and published by World Scientific. This book was released on 1996-11-09 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems. Contents:Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect Transistors Readership: Engineers and condensed matter physicists. keywords:Arsenide;Indium Phosphide;Processing;Semiconductors;Etching;Implantation;Contacts;Implant Isolation;Field Effect Transistors;GaAs-on-Si